SESSION WP 26
SALON 10-15, Wed, 9
1:30 PM
ANALOG TECHNIQUES

Chair: G. De Veirman, Texas Instruments Storage Products Group, Tustin, CA
Associate Chair: T. Wakimoto, NTT LET Labs, Atsugi-shi,
Kanagawa, Japan


26.1 A 700MSample/s 6b Read Channel A/D Converter with 7b Servo Mode 1:30 PM
K. Nagaraj, D. Martin, M. Wolfe, R. Chattopadhyay, S. Pavan,
J. Cancio, T. R. Viswanathan, Texas Instruments, Warren, NJ

An ADC designed for hard-disk drive read channels provides 6b resolution at 700MSample/s with a 7b servo mode operating at 200MSample/s. Measured SNDR is 35.2dB in 6b mode and 41dB in 7b mode. The ADC occupies 0.45mm 2 and consumes 187mW in 0.21 um CMOS.


26.2 A 6b 800MSample/s CMOS A/D Converter 2:00 PM
K. Sushihara, H. Kimura, Y. Okamoto, K. Nishimura, A. Matsuzawa
Matsushita Electric Industrial Co., Ltd., Osaka, Japan

An interpolated parallel 6b 800MSample/s A/D converter in 0.25 um CMOS occupies an active area of 1.8 x 0.95mm 2 and consumes 400mW. Current-steering latches with single-ended clocking are employed. Measured ENOB is >5b up to 200MHz input at 800MHz sampling.

26.3 A Low-Phase-Noise CMOS LC Oscillator with a
Ring Structure 2:30 PM
J. Kim, B. Kim
Korea Advanced Institute of Science and Technology, Taejon, Korea

A CMOS LC oscillator in 0.6 um CMOS with a ring structure to extend phase noise performance limited by conventional LC oscillators shows -132dBc/Hz measured phase noise at 600kHz offset from a 900MHz carrier and dissipates 20mW with 2.5V supply. The phase noise enhancement through the ring structure is estimated by linear modeling.


26.4 An Integrated Low-Phase-Noise Voltage Controlled Oscillator for Base Station Applications 2:45 PM
J. Lin, Bell Labs, Lucent Technologies, Murray Hill, NJ

An integrated VCO uses an on-chip resonator in common-base configuration. Measured phase noise at 600kHz, 800kHz, and 3MHz offsets is -129dBc/Hz, -132dBc/Hz, and -148dBc/Hz, respectively. Phase noise performance meets receiver blocking requirements of DCS 1800 Micro base stations. The chip consumes 38mW and generates 3mW at 1.5GHz.

BREAK 3:00 PM

26.5 A 3V Mixed-Signal Baseband Processor IC for IS-95
3:15 PM
E. Liu, M. Davis, C. Wong, Q. Shami, C-S. Yao, G. Chen,
T. Chung, J. Rathore, W. Kahari
LSI Logic, Milpitas, CA

An integrated mixed-signal baseband processor IC for IS-95 contains 7.5M transistors on a 10.6mm 2 die and consumes 82mA in standby and 128mA in conversion modes. The type-approved production chip integrates two DSPs, microprocessor, memory, baseband codec, voiceband codec, 11b dual-slope ADC, 10b PDM DACs, PLL, 32kHz oscillator, and sine wave squarer in 0.25 um digital CMOS.


26.6 A Differential 160MHz Self-Terminating Adaptive CMOS Line Driver 3:45 PM
R. Mahadevan, D. Johns,
Univ. of Toronto, Toronto, Ontario, Canada

A wide-band differential line driver for transformer-coupled cables integrated in standard 0.35 um CMOS achieves 160MHz bandwidth and no loss in implementing the cable termination. The line driver operates at 3.3V supply and exhibits a -47dB THD for a 2V pp signal across a 75 Ohm load. Automatically-tuned termination and voltage gain independent of process and load impedance variation are provided by the architecture.


26.7 An On-Chip Voltage Regulator using Switched Decoupling Capacitors 4:15 PM
M. Ang, R. Salem, A. Taylor, Sun Microsystems Inc., Palo Alto, CA

On-chip decoupling capacitors are actively switched to suppress resonance in the power distribution system of a microprocessor. Charge storage capacity is amplified. Instantaneous monitoring of rail activity and dynamic control of the switching response provide bandlimited on-chip voltage regulation.


26.8 An On-Chip USB-Powered 3-Phase Up/Down DC/DC Converter in a Standard 3.3V CMOS Process 4:30 PM
F. Sluijs, H. Neuteboom, M. Breedveld
Philips Research Labs, Eindhoven, The Netherlands

The output of the USB-powered DC/DC converter delivers 100mA at 5V with 89% efficiency. The 3-phase up/down converter has four digitally-controlled 5V-tolerant switches. The switching frequency is ~600kHz. Only a few external components are needed. The chip area is 1.0mm 2 in standard 0.35 um 3.3V CMOS.

26.9 A CMOS Band-Gap Reference without Resistors
4:45 PM
A. Buck, C. McDonald 1, S. Lewis, T. R. Viswanathan 2
Univ. of California, Davis, CA
1now with Analog Devices, Inc., Wilmington, MA
2Texas Instruments, Dallas, TX

A band-gap reference uses a 0.5 um digital CMOS without resistors, and ratioed transistors biased in strong inversion together with the inverse-function for temperature-insensitive gain applied to the PTAT term in the reference. After trimming, the output voltage change from 0 to 70 oC is 9.4mV. It occupies 0.4mm 2 and dissipates 1.4mW from a 3.7V supply.

CONCLUSION 5:00 PM