SESSION
WP 26
SALON
10-15,
Wed,
9
1:30
PM
ANALOG
TECHNIQUES
Chair:
G. De Veirman, Texas Instruments Storage Products
Group,
Tustin, CA
Associate
Chair: T. Wakimoto, NTT LET Labs, Atsugi-shi,
Kanagawa,
Japan
26.1 A
700MSample/s 6b Read Channel A/D Converter with 7b Servo Mode
1:30 PM
K.
Nagaraj, D. Martin, M. Wolfe, R. Chattopadhyay, S. Pavan,
J.
Cancio, T. R. Viswanathan,
Texas
Instruments, Warren, NJ
An
ADC designed for hard-disk drive read channels provides 6b resolution at
700MSample/s with a 7b servo mode operating at 200MSample/s. Measured SNDR is
35.2dB in 6b mode and 41dB in 7b mode. The ADC occupies 0.45mm
2
and consumes 187mW in 0.21
um
CMOS.
26.2 A
6b 800MSample/s CMOS A/D Converter
2:00 PM
K.
Sushihara, H. Kimura, Y. Okamoto, K. Nishimura, A. Matsuzawa
Matsushita
Electric Industrial Co., Ltd., Osaka, Japan
An
interpolated parallel 6b 800MSample/s A/D converter in 0.25
um
CMOS occupies an active area of 1.8 x 0.95mm
2
and consumes 400mW. Current-steering latches with single-ended clocking are
employed. Measured ENOB is >5b up to 200MHz input at 800MHz sampling.
26.3 A
Low-Phase-Noise CMOS LC Oscillator with a
Ring
Structure
2:30 PM
J.
Kim, B. Kim
Korea
Advanced Institute of Science and Technology, Taejon, Korea
A
CMOS LC oscillator in 0.6
um
CMOS with a ring structure to extend phase noise performance limited by
conventional LC oscillators shows -132dBc/Hz measured phase noise at 600kHz
offset from a 900MHz carrier and dissipates 20mW with 2.5V supply. The phase
noise enhancement through the ring structure is estimated by linear modeling.
26.4 An
Integrated Low-Phase-Noise Voltage Controlled Oscillator for Base Station
Applications
2:45 PM
J.
Lin,
Bell
Labs, Lucent Technologies, Murray Hill, NJ
An
integrated VCO uses an on-chip resonator in common-base configuration. Measured
phase noise at 600kHz, 800kHz, and 3MHz offsets is -129dBc/Hz, -132dBc/Hz, and
-148dBc/Hz, respectively. Phase noise performance meets receiver blocking
requirements of DCS 1800 Micro base stations. The chip consumes 38mW and
generates 3mW at 1.5GHz.
BREAK 3:00
PM
26.5 A
3V Mixed-Signal Baseband Processor IC for IS-95
3:15
PM
E.
Liu, M. Davis, C. Wong, Q. Shami, C-S. Yao, G. Chen,
T.
Chung, J. Rathore, W. Kahari
LSI
Logic, Milpitas, CA
An
integrated mixed-signal baseband processor IC for IS-95 contains 7.5M
transistors on a 10.6mm
2
die and consumes 82mA in standby and 128mA in conversion modes. The
type-approved production chip integrates two DSPs, microprocessor, memory,
baseband codec, voiceband codec, 11b dual-slope ADC, 10b PDM DACs, PLL, 32kHz
oscillator, and sine wave squarer in 0.25
um
digital CMOS.
26.6 A
Differential 160MHz Self-Terminating Adaptive CMOS Line Driver
3:45 PM
R.
Mahadevan, D. Johns,
Univ.
of Toronto, Toronto, Ontario, Canada
A
wide-band differential line driver for transformer-coupled cables integrated in
standard 0.35
um
CMOS achieves 160MHz bandwidth and no loss in implementing the cable
termination. The line driver operates at 3.3V supply and exhibits a -47dB THD
for a 2V
pp
signal across a 75
Ohm
load. Automatically-tuned termination and voltage gain independent of process
and load impedance variation are provided by the architecture.
26.7 An
On-Chip Voltage Regulator using Switched Decoupling Capacitors
4:15 PM
M.
Ang, R. Salem, A. Taylor,
Sun
Microsystems Inc., Palo Alto, CA
On-chip
decoupling capacitors are actively switched to suppress resonance in the power
distribution system of a microprocessor. Charge storage capacity is amplified.
Instantaneous monitoring of rail activity and dynamic control of the switching
response provide bandlimited on-chip voltage regulation.
26.8 An
On-Chip USB-Powered 3-Phase Up/Down DC/DC Converter in a Standard 3.3V CMOS
Process 4:30 PM
F.
Sluijs, H. Neuteboom, M. Breedveld
Philips
Research Labs, Eindhoven, The Netherlands
The
output of the USB-powered DC/DC converter delivers 100mA at 5V with 89%
efficiency. The 3-phase up/down converter has four digitally-controlled
5V-tolerant switches. The switching frequency is ~600kHz. Only a few external
components are needed. The chip area is 1.0mm
2
in standard 0.35
um
3.3V CMOS.
26.9 A
CMOS Band-Gap Reference without Resistors
4:45
PM
A.
Buck, C. McDonald
1,
S. Lewis, T. R. Viswanathan
2
Univ.
of California, Davis, CA
1now
with Analog Devices, Inc., Wilmington, MA
2Texas
Instruments, Dallas, TX
A
band-gap reference uses a 0.5
um
digital CMOS without resistors, and ratioed transistors biased in strong
inversion together with the inverse-function for temperature-insensitive gain
applied to the PTAT term in the reference. After trimming, the output voltage
change from 0 to 70
oC
is 9.4mV. It occupies 0.4mm
2
and dissipates 1.4mW from a 3.7V supply.
CONCLUSION 5:00
PM