SESSION
WP 23
SALON
7,
Wed,
9
1:30
PM
WIRELESS
BUILDING BLOCKS
Chair:
J. Long, Univ. of Toronto, Toronto, Ontario, Canada
Associate
Chair: H. Tanimoto, Toshiba R & D Ctr.,
Kawasaki,
Japan
23.1 Improved
Mixer IIP2 Through Dynamic Matching
1:30
PM
E.
E. Bautista, B. Bastani, J. Heck
Motorola
Labs, Plantation, FL
Application
of dynamic matching to a direct conversion mixer in 0.35
um
BiCMOS shows 30dB improvement in the NF of an all-CMOS mixer. The 2.7V, 6.1mW
mixer demonstrates a measured IIP2 exceeding +72dBm with 11dB NF, 19dB gain,
and 4.9dBm IIP3.
23.2 0.5-1V
2GHz RF Front-End Circuits in CMOS/SIMOX
2:00
PM
M.
Harada, T. Tsukahara, J. Yamada
NTT
Telecommunications Energy Labs, Atsugi-shi, Kanagawa, Japan
2GHz
RF front-end circuits (LNA, mixer, and VCO) for 0.5V operation are fabricated
in 0.2
um
fully-depleted CMOS/SIMOX. The mixer has a folded LC-tuned structure to avoid
stacking transistors. Undoped MOSFETs are used in the VCO core and in
complimentary source follower output buffers for the mixer and the VCO.
Dissipation is 2mW (LNA), 4mW (mixer) and 3mW (VCO) at 0.5V.
23.3 Ultra-Wide-Dynamic-Range
1.75dB Noise Figure 900MHz CMOS LNA
2:30
PM
G.
Gramegna, A. Magazzù, C Sclafani, M. Paparo
STMicroelectronics,
Catania, Italy
A
900MHz CMOS LNA in RF-dedicated 0.35
um
BiCMOS has 10dB gain,
>=+3dBm
IIP3,
<=1.75dB
NF with
<=2
VSWR at 10mA from 2.75V supply. With
<=2.5
VSWRin, measured NF is 1.6 and 1.5dB at 12 and 20mA, respectively.
23.4 A
900MHz SOI Fully-Integrated RF Power Amplifier for Wireless Transceivers
2:45
PM
M.
Kumar, Y. Tan, J. Sin, L. Shi, J. Lau
Hong
Kong Univ. of Science and Technology, Clear Water Bay,
Hong
Kong
The
SOI fully-integrated RF power amplifier uses 1.5
um
LDMOS (0.35
um
channel length, 3.85
um
drift length, 4.5GHz f
T
and 20V breakdown). The amplifier delivers +23dBm output power with 16dB gain
and 49% PAE at 900MHz using a 5V supply.
BREAK 3:00
PM
23.5 3
to 5GHz Quadrature Modulator and Demodulator Using a Wideband
Frequency-Doubling Phase Shifter
3:15
PM
T.
Tsukahara, J. Yamada
NTT
Telecommunications Energy Labs, Atsugi-shi, Kanagawa, Japan
3-5GHz
Si-bipolar quadrature modulator and demodulator have wideband
frequency-doubling 90
o
phase shifter with phase error self-correction. The shifter produces accurate
quadrature carrier signals at doubled frequency. The modulator and demodulator
in 30GHz Si bipolar dissipate 80 and 83mA, respectively, from 3V supply.
Modulator image rejection is >40dB between 3.2-5.2GHz. Demodulator phase and
amplitude errors are <4
o
and <0.3dB, respectively, between 3.5-5GHz.
23.6 A
Low-Power Low-Noise Accurate Linear-in-dB Variable-Gain Amplifier with 500MHz
Bandwidth for IMT-2000 Systems
3:45
PM
S.
Otaka, G. Takemura
1,
H. Tanimoto
Corp.
Research & Devel. Ctr, Toshiba Corp., Kawasaki, Japan
1Semiconductor
Co. Toshiba Corp., Kawasaki, Japan
A
70dB RX-variable gain amplifier (RX-VGA) with current steering techniques in
BiCMOS with 20GHz f
T
operates up to 500MHz and dissipates 36mW from 3V. Noise figure is <5dB and
IIP3 is >-38dBm at 43dB gain. The RX-VGA achieves a gain error of <2dB
over 78dB gain range, and occupies ~1mm
2.
23.7 Integrated
Adaptive Channel Selectivity for
FM
Receivers
4:15
PM
K.
Kianush, S. Sandee
Philips
Semiconductors, Eindhoven, The Netherlands
An
FM IF channel with a time-continuous adaptive filter is part of a global radio
receiver system. Instantaneous filter bandwidth is dynamically controlled for
optimum selectivity with increased sensitivity, low THD, and high
frequency-deviation tolerance. The 10mm
2
circuit in 1.8
um
bipolar dissipates 15mW from 5V supply. Sensitivity is 1.3
uV
for 26dB SNR with 72dB dynamic selectivity at 200kHz
[Delta]f
and 0.5% THD at 175% overmodulation.
CONCLUSION 4:45
PM