SESSION
WA 19
SALON
8,
Wed,
9
8:30
AM
TECHNOLOGY
DIRECTIONS: HIGH-FREQUENCY WIRELESS
Chair:
M. Soyuer, IBM Corp., Yorktown Heights, NY
Associate
Chair: T. Baba, Panasonic Technology, Inc.,
Cupertino,
CA
19.1 Chip-Package
Co-Design of a 5GHz RF Front-End
for
WLAN
8:30
AM
P.
Wambacq, S. Donnay, P. Pieters
1,
W. Diels, K. Vaesen,
W.
De Raedt, E. Beyne, M. Engels, I. Bolsens
IMEC,
Heverlee, Belgium
1also
PhD student at KU Leuven, Belgium
Single-package
integration of complete transceivers, based on a thin-film MCM technology
(MCM-D) with integrated passives, is demonstrated with a 6.7x6.5mm
2
single-package front-end, including RF blocks and two bandpass filters for a
5GHz WLAN receiver.
19.2 5GHz
CMOS Radio Transceiver Front-End Chipset
9:00
AM
T-P.
Liu, E. Westerwick, N. Rohani, R-H. Yan
Lucent
Technologies, Bell Labs, Holmdel, NJ
A
5GHz band radio transceiver front-end chipset for wireless LAN applications
incorporates direct conversion in 0.25
um
CMOS. The 4mm
2
5.25GHz receiver IC contains an LNA with 2.5dB NF and 16dB power gain, a
receive mixer with 12dB SSB NF and 13.7dB voltage gain. The 2.7mm
2
transmitter IC has output 1dB compression of -2.5dBm at 5.7GHz with 33.4dB
(image) sideband rejection using an integrated quadrature VCO. Receiver and
transmitter consume 114mW and 120mW, respectively, from 3V.
19.3 A
2V 5.1-5.8GHz Image-Reject Receiver with Wide Dynamic Range
9:30
AM
J.
Maligeorgos, J. Long
Univ.
of Toronto, Toronto, Ontario, Canada
A
monolithic 5-6GHz band receiver consisting of a preamplifier, dual
doubly-balanced mixers, quadrature LO generator and prescaler, realizes over
45dB image rejection in a mature 25GHz silicon bipolar technology. The measured
SSB (50
Ohm)
noise figure is 5.1dB with -9.5dBm IIP3 and 15dB conversion gain at 5.3GHz. The
1.9x1.2mm
2
IC in a standard 32-pin CQFP consumes 45mW from a 2.2V supply.
BREAK 10:00
AM
19.4 Low-Cost
60GHz Band Integrated Antenna
Transmitter/Receiver
Modules Utilizing Multi-Layer Low-Temperature Co-Fired Ceramic Technology
10:15
AM
K.
Maruhashi, M. Ito, L. Desclos
1,
K. Ikuina
2,
N. Senba
2,
N.
Takahashi
2,
K. Ohata
Kansai
Electronics Research Labs, NEC Corp., Otsu, Shiga, Japan
1C&C
Media Research Labs
2Functional
Materials Research Labs
Low-cost
10mW output TX/RX MCMs for 60GHz high-speed wireless networks contain flip-chip
MMICs, cavity structure, embedded coplanar waveguide adapted to thick-film
printing and integrated antenna on multi-layer low-temperature co-fired ceramic
substrates, allowing >100Mb/s data rate.
19.5 76GHz
Automotive Radar Chipset with Stabilizing Method for Face-Down High-Frequency
Circuits
10:45
AM
Y.
Watanabe, T. Hirose, H. Uchino
1,
Y. Ohashi, S. Aoki, Y. Aoki
1,
N.
Okubo
Fujitsu
Labs, Ltd., Atsugi, Kanagawa, Japan
1Fujitsu
Quantum Device Ltd.
A
chipset for 76GHz FM continuous-wave radar systems uses flip-chip assembly. The
circuits are stabilized and are tolerant to parasitic oscillation. The
amplifier chip has 25dB gain at 76GHz with 2V supply. The chipset includes
amplifiers, mixer, frequency doubler, duplexer and VCO using 0.15
um
HEMT.
19.6 Wireless
Interconnection in a CMOS IC with
Integrated
Antennas
11:15 AM
B.
Floyd, K. Kim, K. K. O
Univ.
of Florida, Gainesville, FL
A
receiver with integrated linear dipole antennas for on-chip wireless
interconnection consists of an antenna, LNA, buffer, and frequency divider, and
is implemented in a 0.25
um
CMOS process, operating at 7.4GHz. On-chip wireless transmission and reception
make possible inter- and intra-chip wireless transmission.
19.7 Electromagnetically-Shielded
High-Q
CMOS-Compatible
Copper Inductors
11:30 AM
H.
Jiang, J-L. Yeh, Y. Wang, N. Tien
Cornell
Univ., Ithaca, NY
A
CMOS-compatible method fabricates on-chip suspended high-Q
electromagnetically-shielded spiral inductors. Q-factor is 36 at 5.2GHz for
copper-encapsulated polysilicon inductors. The copper-plated surfaces of the
cavity beneath the inductor provide a good radio-frequency shield.
CONCLUSION 11:45
AM