Stanford University, Stanford, CA
A global positioning system (GPS) receiver, implemented in 0.5um CMOS, consumes 115mW from a 2.5V supply. The 11.2mm2 receiver includes complete analog signal path, A/D conversion and frequency synthesizer. Measured noise figure is 5.4dB. Peak spurius-free dynamic range is 57dB.
University of California at Los Angeles, CA
A dual-band receiver employs Weaver architecture with two tuned RF stages and a common IF stage to operate with GSM and DCS1800 standards using only two oscillators. In digital 0.6um CMOS, the receiver achieves 4.5dB overall noise figure and -8dBm IIP3 at 900MHz, and 4.9dB and -6dBm at 1.8GHz. The voltage gain is 23dB with 75mW dissipation with 3V supply.
Analog Devices, Brasted, England
A direct-conversion L-band tuner for digital DBS utilizes half-frequency VCO, digital-gain control, switched RF attenuators and polyphase network/DLL quadrature generation to achieve 12dB noise figure, +8.5dBm IIP3 and 2o quadrature accuracy over the full RF and baseband frequency ranges.
Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland
A 1GHz receiver, integrated in a 0.8um BiCMOS technology, consumes 1.2mW at 2V. Based on super-regeneration, it is dedicated to short-distance data exchange up to 100kb/s. Sensitivity is -98dBm for 12dB S/N, and 3dB selectivity at 1GHz is 100kHz at -3dB.
C. Vaucher - Philips Research Laboratory, Eindhoven, The Netherlands
A single-chip car radio IC for global applications uses 2um bipolar technology. Different regional requirements are met by software setting of receiver parameters. The IC requires few external components and no mechanical alignment. Internal tuning control algorithm and adaptive PLL frequency synthesizer allow inaudible signal quality checks on other signals.
Oregon State University, Corvallis, OR
A 900MHz low-noise amplifier (LNA) requiring no external components is integrated in standard digital 0.6um CMOS. With bias current reuse, the LNA dissipates 18mW from a single 3V power supply and provides 18dB power gain with 3.0dB noise figure. Three monolithic transformers implement on-chip matching networks.
University of Florida at Gainsville, FL
1IBM T. J. Watson Research Ctr., Yorktown Heights, NY
2NCCOSC RDTE D805, San Diego, CA
4GHz and 13GHz LNAs are implemented in a 0.1um CMOS process on SOI and SOS substrates. Forward gains of the 4GHz SOS and SOI amplifiers are 12 and 11dB at 4GHz, while those for the 13GHz amplifier are 15 and 5.3dB. Minimum Fmins are 2.8 and 4.9dB for the 4 and 13GHz SOS amplifiers.
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