Hewlett-Packard Labs., Palo Alto, CA
A 25GHz ft Si-bipolar transmitter/receiver chip pair uses multi-phase sampling to transmit 10Gb/s data over 20ft of 0.190in coaxial cable. The 3.0W, 2.6x4.4mm2 transmitter does clock generation and 16:1 multiplexing. The 5.5W, 3.9x4.4mm2 receiver does clock and data recovery along with 1:16 demultiplexing. Both chips use on-chip VCOs, and require a single off-chip capacitor.
NEC Corp., Kanagawa, Japan
A single-chip 2.4Gb/s CMOS optical-receiver using 0.15um bulk CMOS achieves a power consumption of 104mW at 2V. A preamplifier circuit with 5.9GHz bandwidth and 59dBW gain reduces the effect of noise caused by substrate crosstalk from digital to analog parts.
NEC Corp., Kanagawa, Japan
A single-chip 4.25Gb/s transceiver with an 8B/10B encoder/decoder meeting the ANSI Fiber Channel standard uses 0.25um CMOS technology. This transceiver features an asynchronous binary tree 1:8 DEMUX, a parallel-to-parallel frequency conversion, comma-detection and word-alignment logic, and operates from 3.82Gb/s to 4.43Gb/s at 2.5V.
Siemens AG, Munich, Germany
A 3.5Gb/s two-chip receiver consisting of a preamp and a gate-array-based CDR-DMUX uses 25GHz Si bipolar. The preamp is mounted in the PIN-diode package. Measurements show >10dB excess gain if the CDR offset is restricted. The CDR features SDH-compatible loss-of-signal detection. The chips dissipate 200mW and 1500mW respectively.
Silicon Image, Cupertino, CA
1National University, Seoul, Korea
A 4.5Gb/s interconnect for a digital display in 0.35um CMOS consists of three channels. Bandwidth is enough for true color SXGA (1280x1024 pixels) and beyond. Each channel supports up to 1.5Gb/s over a 10m shielded twisted-pair cable. Jitter management tolerates more than 2ns jitter, typically found on a synthesized pixel clock from graphics controllers.
Hitachi, Ltd., Tokyo, Japan
1Hitachi Device Engineering Co., Ltd., Tokyo, Japan
Self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with self-aligned stacked metal/IDP (SMI) electrodes provide a 95GHz cutoff frequency and 8ps ECL gate delay. A 1/8 static frequency divider operates up to 50GHz.
Hitachi, Ltd., Tokyo, Japan
1Hitachi Device Eng. Co., Ltd., Tokyo, Japan
A 40Gb/s analog chipset with 35GHz preamplifier (PRE), 31GHz automatic gain control (AGC) amplifier core, and 40Gb/s decision circuit for optical receiver uses the selective-epitaxial SiGe HBTs described in Paper 19.6. A common-base input stage for PRE, and transimpedance amplifier active load for the AGC improve bandwidth.