DISCUSSION SESSIONS

FE5 - Will CMOS Image Sensors Survive Scaling? -- (Salon 1-6)

The panel debates viability of CMOS image sensors in <0.25um technologies. As CMOS technology scales, photodetector performance will deteriorate: lower QE due to the shallow junctions and thin epitaxial layer and higher dark current due to higher doping levels and finer features. It may not be possible to build any photodetectors in SOI. Are CMOS image sensors a fad or is there a way to integrate photodetectors with CMOS circuitry? The panelists' views range from asserting that CMOS sensors will remain viable except for SOI, to using DRAM processes, to building photodetectors on top of CMOS.

Panel:

H-S. Wong, IBM, TJ Watson, Yorktown Heights, NY
Yoshiyuki Matsunaga, Toshiba, Kawasaki, Japan
Daniel McGrath, Polaroid Corp., Cambridge, MA
Kit M. Cham, Helwett-Packard Labs., Palo Alto, CA
Jack Uppal, Intel Corp., Santa Clara, CA
Nobukazu Teranishi, NEC Corp., Kanagawa, Japan
J. E. D. Hurwitz, VLSI Vision Ltd., Edinburgh, Scotland

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