SESSION FA11

IMAGE SENSORS

11.1 - A 200mW 3.3V CMOS Color Camera IC Producing 352x288 24b Video at 30Frame/s - 8:30 AM

Bell Labs., Lucent Technologies, Holmdel, NJ

¹University of Adelaide, South Australia

An IC comprising a 354x292 sensor array, programmable-gain amplifier, A/D, and digital circuits performing color interpolation, color correction, and exposure measurement is fabricated in 0.8um CMOS. The 105mm² chip produces 24b RGB at 30Frame/s dissipating <200mW from a 3.3V supply.

11.2 - A Single-Chip CMOS 306x244-Pixel NTSC Video Camera - 9:00 AM

VLSI Vision, Ltd., Edinburgh, Scotland, UK

A single-chip CMOS NTSC video camera incorporates 306x244 image sensor array, sensor readout logic, A/D and D/A converters and custom 300MIPS processor for color reconstruction and NTSC encoding. Operation is from a single 5V supply and a 14.32MHz crystal clock. In 0.8um 1P, 2M CMOS, the device integrates 580k devices in a 68mm² die.

11.3 - A 37x28mm² 600k-Pixel CMOS APS Dental X-ray Camera-on-a-Chip with Self-Triggered Readout - 9:30AM

Photobit Corp., La Crescenta, CA

A 675(H) x 900(V) pixel CMOS APS image sensor chip in 2um 1P, 2M technology measures 37x28mm² with 40um pixel pitch, has on-chip timing and control logic, fixed-pattern noise suppression and features an event-detection circuit for self-triggered readout. The sensor is placed in a patient's mouth for dental x-ray applications.

11.4 - A CMOS APS with On-Chip Pixel Binning for Variable Resolution Imaging - 9:45 AM

JPL, California Institute of Technology, Pasadena, CA

¹Photobit Corp., La Crescenta, CA

A variable resolution CMOS active pixel image sensor that enhances S/N ratio at low illumination level has column-parallel circuits for signal summation from kernels of programmable size. The 128x128 prototype array consumes only 24mW at 125Frame/s and demonstrates more than 10dB S/N enhancement for 2x8 kernel summation. Fixed-pattern noise is <0.5% of full-well signal.

BREAK 10:00 AM

11.5 - A 256x256 CMOS Imaging Array with Wide Dynamic Range Pixels and Column-Parallel Digital Output - 10:15 AM

¹MIT, Cambridge, MA

²National Semiconductor Corp., Santa Clara, CA

³Polaroid Corp., Cambridge, MA

Pixel dynamic range is increased 20x using a time-varying lateral overflow gate potential. Column-parallel outputs allow correlated double sampling and digitization at high frame rate. The imager has 96dB dynamic range, 1.69V saturation level, and 4.0mV dark FPN. Power dissipation is 52mW at 30frame/s and 400mW at 390frame/s.

11.6 - A 1/2 inch 1.3M-Pixel Progressive-Scan IT-CCD for Still and Motion Picture Applications - 10:45 AM

NEC Corp., Sagamihara, Japan

A 1/2 inch 1.3M-pixel progressive-scan IT-CCD has pixel-exchange-and-mix readout function that provides 30frame/s 525-line color pictures and 15frame/s 1050-line color pictures. The H-CCD achieves a 2.5V drive. An on-chip amplifier that suppresses back-gate effects achieves an 11% gain increase over that of an conventional amplifier.

11.7 - A 1mm 50k-Pixel IT CCD Image Sensor for Miniature Camera System - 11:15 AM

Matsushita Electronics Corp., Osaka, Japan

A 1mm 50k-pixel interline CCD features a 4x4um² pixel, integration of a Vsub adjust circuit and a package-less assembly of a chip provided microlens. The resultant chip size and the assembled device outer size are 1.1(H)x 1.38(V) mm² and 1.2(H)x 1.5(V)mm², respectively.

11.8 - A 3.7x3.7um-Pixel CMOS Image Sensor for Digital Still Camera Application - 11:45 AM

Toshiba Corp., Kawasaki, Japan

A CMOS image sensor with 3.7x3.7um² pixels uses 0.6um CMOS. The pixel uses a single drive-line/row that drives address capacitances and reset transistors with 3-level clock pulses. The sensor operates with a 3.3V single supply and 30mW dissipation.

CONCLUSION 12:00 AM

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