SESSION SP23

SALON 7

ANALOG TECHNIQUES

Chair: T. Wakimoto, NTT System Elec. Labs., Kanagawa, Japan
Associate Chair: R. Blauschild, Philips Semi., Sunnyvale, CA

23.1 - Single-Chip Class-E Converter for Compact Flourescent Lamp Ballast - 1:30 PM

M. Radecker, H. Fiedler, F. Vogt, H. Vogt. Fraunhofer-Institute of Microelectronic Circuits and Systems, Duisburg, Germany

A 14mm2 single-chip, smart-power, class-E fluorescent lamp ballast converter has five terminals and handles 15W at line voltages from 50V to 240V. The self-protected IC comprises a 1200V vertical DMOS and circuitry for preheating, ignition and control of the lamp.

23.2 - A High-Efficiency Variable-Voltage CMOS Dynamic dc-dc Switching Regulator - 2:00 PM

W. Namgoong, M. Yu, T. Meng Stanford University, Stanford, CA

A dc-dc regulator operates at variable switching frequency from 1MHz to 10kHz and 8ms/V tracking speed. The converter efficiency is 75-90% for voltages from 1.5V to 3.5V and power is from 10mW to 250mW. The power transistors and voltage controllers are integrated in 0.8um CMOS.

23.3 - A 600MHz Si Bipolar Pin Electronics IC with Timing Error Less Than 25ps - 2:30 PM

T. Nomura , T. Wakimoto1 Schlumberger Technologies, San Jose, CA 1NTT System Electronics Laboratories, Kanagawa, Japan

A 600MHz ATE pin electronics IC integrates a driver with termination, a window comparator, a programmable load, and hard clamps on a 9GHz/5GHz complementary Si bipolar process. The IC realizes 1V Tr/Tf of 220ps and timing error less than 25ps down to 0.8ns minimum pulse width.

BREAK 3:00 PM

23.4 - A 12b 28-Channel Trimless DAC - 3:15 PM

M. Imamura, K. Kuwahara Yokogawa Electric Corp., Tokyo, Japan

A 12b DAC operates at 12.7b resolution, 2.3us settling time, and 5V power. Triple-rank architecture and binary-weighted transconductance eliminate trimming and calibration. The 8.25x8.80mm2 chip in 1um CMOS consumes 110mW.

23.5 - CMOS Current-Controlled Oscillators using Multiple-Feedback-Loop Ring Architectures - 3:45 PM

D-Y. Jeong, S-H. Chai1, W-C. Song1, G-H. Cho Korea Advanced Institute of Science and Technology, Taejon, Korea 1Electronics and Telecommunications Research Inst., Taejon, Korea

Three types of high-frequency current-controlled oscillators (ICOs) are implemented in an 0.8um CMOS technology. Differential current steering logic (DCSL) with multiple inputs is used for the delay cells. Using multiple loop ring architectures, the maximum oscillation frequency is 1.69GHz with power dissipation of 78mW.

23.6 - A 1.8GHz CMOS Voltage-Controlled Oscillator - 4:00 PM

B. Razavi University of California, Los Angeles, CA

A quadrature VCO with on-chip inductors has -100dBc/Hz phase noise at 500kHz offset frequency, drawing 4.6mA from 3.3V. The chip in 0.6um CMOS has 120MHz tuning range and 114MHz/V gain.

23.7 - A Balanced 1.5GHz Voltage-Controlled Oscillator with an Integrated LC Resonator - 4:15 PM

L. Dauphinee1, M. Copeland1, P. Schvan2 1Carleton University, Ottawa, Ontario, Canada 2Nortel Ltd., Ottawa, Ontario, Canada

A balanced 1.5GHz VCO using a fully-integrated LC resonator is in 11GHz BiCMOS. Oscillator phase noise is -105dBc/Hz at 100kHz offset, with 3.6V supply and 40mW dissipation. Output power varies less than 1dB over a 10% tuning range.

23.8 - Silicon Bipolar VCO Family for 1.1 to 2.2GHz with Fully Integrated Tank and Tuning Circuits - 4:30 PM

B. Jansen, K. Negus, D. Lee Hewlett-Packard Co., Newark, CA

Voltage-controlled oscillators are built with circuit elements including inductors, capacitors and varactors on the same silicon bipolar die. VCOs at 1.1, 1.55 and 2.2GHz draw 16mA at 2.7V, have -105dBc/Hz phase noise at 100kHz offset and +/-6% tuning range and occupy 1mm2.

CONCLUSION 4:45 PM

Go back to Table of Contents