SESSION SP22

SALON 1-6

COMMUNICATIONS BUILDING BLOCKS II

R. Bayruns, Anadigics, Warren NJ
R. van de Plassche, Philips Research Labs, Eindhoven, The Netherlands

22.1 - A Stable 250 to 4000MHz GaAs IQ Modulator IC - 1:30 PM

A. Teetzel Hewlett-Packard, Santa Rosa, CA

A 0.4um GaAs IQ modulator IC produces 60db image rejection at 880MHz using FET-based variable-RC phase shifters, amplitude detectors, and a negative feedback loop. The chip is 1.6x1.1mm2 and draws 250mA from -6V.

22.2 - A 27mW CMOS Fractional-N Synthesizer/Modulator IC - 2:00 PM

M. Perrott. T. Tewksbury1, C. Sodini MIT Microsystems Technology Lab., Cambridge, MA 1Analog Devices, Wilmington, MA

A 0.6um CMOS synthesizer performs 2.5Mb/s GFSK modulation on an external 1.8GHz VCO by dithering a divider within a phase-locked loop. The chip is 3x3mm2 and contains on-chip loop filter, pipelined digital MASH SIGMA DELTA converter, and 930MHz modulus 64 prescaler.

22.3 - A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver - 2:30 PM

A. Shahani, D. Shaeffer, T. Lee Stanford University, Stanford CA

A fully-differential 1.575GHz GPS receiver is achieved in a 0.35um CMOS digital process. The 0.84mm2 die has 3.8dB NF LNA with 17dB gain and balanced mixer with +6dbm IP3 and 10dB NF. The circuit uses 3nH on-chip inductors and operates on a single 1.5V supply.

BREAK 3:00 PM

22.4 - PRAM - A Power RAMping Controller for TDMA Systems in Digital Mobile Telecom Applications - 3:15 PM

R. Becker, S. Neukom, W. Birth1 Philips Semiconductors, Z rich, Switzerland/1N rnberg, Germany

A 7.1mm2 software-programmable CMOS chip controls the ramp-up and ramp-down behavior of the power amplifier in TDMA systems. Supply voltage is 2.7V to 6V with 10uA current in power-down and 6mA in power-up mode.

22.5 - 5.8GHz and 12.6GHz Si Bipolar MMICs - 3:45 PM

S. Voinigescu,M. Maliepaard Nortel Technology, Northern Telecom Ltd., Ottawa, Canada

In a 24GHz fT double-poly technology on-chip inductors are used for an LNA with 7.2dB gain, 4.2db NF, -35dB S11, and 7.7mW power at 5.8GHz. The mixer conversion gain is 21dB with 4.2dB NF, -22dB S11, and 26mW power. At 12.6GHz a Darlington stage has 8dB gain and -30dB S11. The circuits operate from single 3.3V supplies.

22.6 - High-Dynamic-Range Variable-Gain Amplifier for CDMA Wireless Applications - 4:00 PM

G. Singh Sahota, C. Persico Qualcomm, Inc., San Diego, CA

A variable-gain amplifier in 0.8um 12GHz BiCMOS has 90dB input dynamic range with 5dB noise figure at 45dB gain and -3dBm IIP3 at -45dB gain. The chip occupies 1mm2, uses a single 3.6V supply, and achieves <250MHz bandwidth over temperature.

CONCLUSION 4:15 PM


Go back to Table of Contents