SESSION SA21

SALON 10-15

AMPLIFIERS

Chair: R. Jewett, Hewlett-Packard Labs, Palo Alto, CA
Associate Chair: W. Sansen, Katholieke Univ. Leuven, Belgium

21.1 - Compact 1.8V Low-Power CMOS Operational Amplifier Cells for VLSI - 8:30 AM

K-J. de Langen, J. Huijsing Delft University of Technology, Delft, The Netherlands

A 1.8V CMOS has a pMOS input stage, another has a rail-to-rail input stage. The gain is >88dB for a 10kohm load. Bandwidth is 5/5.8MHz at CL=5pF using 180/220uA. Input noise is 30nV/sqrt(Hz). The maximum output current is 1.2mA. Area is 0.08/0.1mm2 in a 1.6um process.

21.2 - A Multistage Amplifier Topology with Nested Gm-C Compensation for Low-Voltage Application - 9:00 AM

F. You, S. Embabi, E. S nchez-Sinencio Texas A&M University, College Station, TX

A 100dB 4-stage amplifier is stabilized by nested transconductance-capacitance compensation. It yields 1MHz GBW with 1.4mW from +/-1V and a 10kohm , 20pF load, using 0.22mm2 in digital 2um CMOS.

21.3 - A High-Performance Autozeroed CMOS OpAmp with 50uV Offset - 9:30 AM

F. Krummenacher2,1, R. Vafadar1,A. Ganesan3, V. Valence1 1MEAD Microelectronics S. A., St. Sulpice, Switzerland 2Smart Silicon Systems S. A., Lausanne, Switzerland 3Ganesan Consulting, Austin, TX

A 2.2x1.9 mm2 chip uses mixed-mode autozeroing and achieves 3.0uV/deg C drift, 120dB dc gain and 4.5MHz GBW. The dc CMRR is >105dB and PSRR is >120dB, using 6.5mW and 1um digital CMOS.

BREAK 10:00 AM

21.4 - A 1V BiCMOS Rail-to-Rail Amplifier with n-Channel Depletion-Mode Input Stage - 10:15 AM

R. Griffith, R. Vyne, R. Dotson, T. Petty Motorola Analog IC Division, Tempe, AZ

A rail-to-rail opamp has 110dB gain for a 1V supply. The input uses n channel depletion-mode MOSFETS. Trimmed input offset is 0.5mV, input noise is 40nV/sqrt(Hz) at 1kHz, and GBW is 5MHz with 1.2mA supply current. The bipolar output drives 10mA at 1V and 50mA at 5V.

21.5 - A Micropower Precision Single-Supply Instrumentation Amplifier - 10:45 AM

V. Ivanov Burr-Brown Corp., Tucson, AZ

A bipolar instrumentation amplifier has input common-mode voltage range extending below the negative supply rail and rail-to-rail output swing. A 2-opamp structure with input level shifters provides 100kHz bandwidth (gain of 5), consumes ~50uA and operates from 2.2 to 36V.

21.6 - 25Gb/s AGC Amplifier, 22GHz Transimpedance Amplifier and 27.7GHz Limiting Amplifier ICs using AlGaAs/GaAs-HEMTs - 11:15 AM

Z. Lao, M. Berroth, V. Hurm, A. Thiede, R. Bosch, P. Hofmann, A. H lsmann, C. Moglestue, K. K hler Fraunhofer Institute of Applied Solid-State Physics, Freiburg, Germany

Three amplifiers for optical systems use AlGaAs/GaAs HEMT technology. An AGC amp has 30dB gain and 35dB dynamic range, an 18GHz gain-independent -3dB cut-off frequency, and up to 25Gb/s rate. A transimpedance amp has 22GHz bandwidth and 76dBohm gain. A limiting amp has 27.7GHz bandwidth, and 26dB gain.

21.7 - A Monolithic Wideband Variable-Gain Amplifier with a High Gain Range and Low Distortion - 11:45 AM

P. van Lieshout1, R. van de Plassche2 1Philips Semiconductors, Nijmegen, The Netherlands 2Philips Research Labs, Eindhoven, The Netherlands

32 coupled differential transistor pairs, each with a variable offset applied to its input, result in a variable-gain amplifier with a linear input region inversely proportional to gain. Gain varies from 0 to 25dB, with 35MHz bandwidth and output IP3 between 24 and 30dBm. 40mW is dissipated from 5V, using 0.15mm2 in 1um bipolar.

21.8 - A GaAs MESFET Schottky Diode Barrier Height Reference Circuit - 12:00 PM

S. Taylor TriQuint Semiconductor, Inc., Beaverton, OR

A barrier-height reference voltage derived from Schottky diodes in a 20GHz GaAs MESFET process achieves <100ppm/deg C drift using 0.072mm2 and 700uA from 5V. Output varies <0.15% for 10% supply change.

CONCLUSION 12:15 PM

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