A PLL clock generator and distribution network minimizes long-term and cycle-to-cycle short-term jitter for microprocessor clocking up to 440MHz at 2.8V supply, with 83ps measured jitter, and has 880MHz VCO with a 50% duty cycle signal output and functions to 1V supply.
A dual-loop, interpolating DLL has 12ps rms jitter, 0.44ps/mV supply sensitivity, unlimited phase , and four orders of magnitude frequency range. In 1um drawn CMOS, the circuit occupies 0.8mm2 and dissipates 102mW at 250MHz from a 3.3V supply.
A pulse-width-detection mechanism allows a process-independent, digitally-controlled PLL to achieve low jitter and deterministic error correction. A prototype, built using 0.25um (Leff) CMOS, operates from 45MHz to 400MHz. At 250MHz, it dissipates 10mW and has peak-to-peak jitter of 315ps with 2MHz, 2V supply noise.
A PLL microprocessor clock generator with instantaneous frequency shifting for energy management and testing operates to 1GHz at 1.6V. Dual loop architecture ensures a 50% duty-cycle. The oscillator control and filter capacitor simulated PSNR is 1ps for 20mV at 500MHz.
A 16b 0.8um CMOS energy-recovery microprocessor datapath dissipates 48mW at 53MHz down to 960uW at 10MHz when powered from a resonant clock driver. Dissipation is 3 to 7 times lower than that of a conventional clock driver under the same test conditions. CMOS logic includes bootstrapped clock buffers, precharging, and pass-transistor logic.
A family of cells with 0.2V to 0.5V I/O supply allow direct communication between circuits with VDD ranging from 5V to <1V. Implementations are in six gate array families and two custom circuits from three ASIC vendors in 0.8um to 0.35um technology. Full link power dissipation is 7.5mW at 800Mb/s in 0.5um technology.
Partial-response detection cuts driver power by up to 90% in memory-to-processor communications. Detection is with auto-zero CMOS comparator combined with smaller drivers and a transmission line with damping resistors. Measured power dissipation is 12mW/pin and 3.5mW/pin at 500Mb/s and 100Mb/s, respectively, in a 0.35um CMOS DRAM process.