A Fibre-Channel-compliant 1.0625Gb/s serial interface core combines a complete transceiver, integrating data serializaton, clock/data recovery and at-speed self-test functions. The 0.5um CMOS core occupies <4mm2, and consumes 0.42W.
A 3.3V 6.2x6.2mm2 single-chip 16CAP transceiver for ATM-LAN using 0.35um BiCMOS technology includes 8b A/D converter, clock recovery circuit, transmitter, and digital modulation/demodulation. The supply voltage is 3.3V and power consumption is 1.1W.
A 12mm2 1.25Gb/s CMOS device with both transmitter and receiver on a single chip has three phase-locked loops for clock generation and recovery, a serializer, a deserializer, and word alignment logic. It is in a 0.5um single-poly, triple-metal digital CMOS process and dissipates 460mW.
A 3.3V, 50Mb/s transceiver for optical burst communication in 0.8um CMOS implements an adjustment-free instantaneous response receiver with -35dBm to -11.4dBm input optical receive range, and a laser diode driver. The chip dissipates 0.3W and has a 5x5mm2 die
Adjustment-free clock and data recovery for 2.488Gb/s SONET is provided by a 1.77W, 3.45x3.45mm2 chip in 25GHz fT silicon bipolar. The chip uses an on-chip VCO for low-cost packaging, operates from 2-3Gb/s over process, voltage and temperature, and requiries one off-chip filter capacitor. For network monitoring, a loss-of-signal detector has trigger threshold programmable between 10E-4 and 10E-6 BER.
Using the absolute value of divided signal phase difference to control the VCO, clock recovery at a frequency twice that of the internal phase detector is accomplished. It is fabricated in 0.25um BICMOS and consumes 150mW from 3.3V.
A 20-channel, 500Mb/s/channel CMOS laser diode (LD) driver for a parallel optical interconnect has an LVDS input interface with acceptable common-mode from 50mV to 2.35V. It supports four different modes of operation with maximum data throughput at 10Gb/s. The channel data skew is below 100ps. It uses a standard 3.3V power supply with 1.6W of power dissipation.