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Chair: I. Miller, Motorola, Tempe, AZ
Associate Chair: R. Jewett, HP Labs, Palo Alto, CA
24.1 A 1.3V Op-Amp in Standard 0.7mm CMOS with Constant gm and Rail-to-Rail Input and Output Stages (1:00)
G. Ferri, W. Sansen(1)
Universita' L'Aquila, Italy
(1)Katholieke Universiteit Leuven, Belgium
An operational amplifier in 0.7um CMOS works with supply voltages down to 1.3V. Input transistors operating in weak inversion and replica bias circuitry yield constant transconductance over the rail-to-rail common-mode input range. The circuit provides 1.3MHz gain-bandwidth for 460uW power consumption with 15pF load capacitance.
24.2 Fully-Integrated 5V CMOS System for a 20MSample/s Sampling Oscilloscope (1:30)
M. Krauss, H. Thieme, H-G. Schniek, E. Wittig(1)
Zentrum Mikroelektronik Dresden GmbH, Dresden, Germany
(1)Wittig Test Technology, Böblingen, Germany
This chip contains broadband amplifiers, trigger signal processing, a 6b 20MSample/s flash ADC, 128-word embedded SRAM and control circuitry. A level- input buffer with 80MHz bandwidth and 90V/us slew rate allows processing of an input voltage ±0.5V beyond the power rails. The 1.2um CMOS IC has a 40MHz system bandwidth.
24.3 A 4x20W Monolithic Audio Amplifier for Automobile Radios using a Complementary DMOS BCD Technology (2:00)
E. Botti, T. Mandrini, F. Stefani
SGS-Thomson Microelectronics, Milan, Italy
A quad audio-power amplifier uses a class-AB complementary DMOS output stage and load switching to reduce power dissipation. The BCD process includes n-channel lateral DMOS with 0.16OHMmm2 on-resistance and complementary bipolar devices for op-amp design.
BREAK (2:30)
24.4 1.2V CMOS Switched-Capacitor Circuits (3:15)
J-T. Wu, Y-H. Chang, K-L. Chang
National Chiao-Tung University, Hsin-Chu, Taiwan
1.2V switched-capacitor circuits are implemented in a standard 0.8um CMOS technology without low-threshold-voltage devices. Crcuits include a 3.5V charge pump for driving analog switches, an operational amplifier with 90dB dc gain and 10MHz unity-gain frequency, a third-order 50kHz low-pass filter, and a bandgap reference.
24.5 A 900MHz Frequency Synthesizer with Integrated LC Voltage-Controlled Oscillator (3:45)
A. Ali, J. Tham
Rockwell International, Newport Beach, CA
A frequency synthesizer for 900MHz ISM band applications has 41 programmable channels with 600kHz spacing. The settling time is 600ms while the output spurious levels are less than -110dBc.The phase noise is -101dBc/Hz at a 100kHz offset. The chip operates over a 2.7-5.0V supply range, and is fabricated using a 25GHz bipolar process.
24.6 A 900MHz CMOS LC-Oscillator with Quadrature Outputs (4:15)
A. Rofougaran, J. Rael, A. Abidi
University of California, Los Angeles, CA
A 900MHz voltage-controlled oscillator is implemented in 1mm CMOS with on-chip inductors. The phase error in its balanced quadrature outputs is less than 1°, and the inherent output phase noise at 100kHz from the carrier is -85dBc/Hz. The circuit uses 10mA from a 3V supply.
24.7 A 3V 4GHz nMOS Voltage-Controlled Oscillator with Integrated Resonator (4:30)
M. Soyuer, K. Jenkins, J. Burghartz, M. Hulvey
IBM T. J. Watson Research Center, Yorktown Heights, NY
A 4GHz fully-monolithic nMOS voltage-controlled oscillator circuit is implemented in a 0.5um BiCMOS technology. The tuning range is 9% with an on-chip varactor-tuned resonator and a control voltage of 0 to 3V. Oscillator phase noise of -106dBc/Hz is achieved at 1MHz offset. The circuit draws 8mA from a 3V supply. A 2.1um-thick metal layer over an 11mm dielectric layer is used to implement a 2.4nH tank spiral inductor.
CONCLUSION (4:45)
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