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Chair: C. Stancampiano, Eastman Kodak Co., Rochester, NY
Associate Chair: W. Yang, Harvard University, Cambridge, MA
11.1 256x256 CMOS Active Pixel Sensor Camera-on-a-Chip (8:30)
R. Nixon, S. Kemeny, C. Staller, E. Fossum
Jet Propulsion Laboratory, Pasadena, CA
A 256x256-pixel image sensor with integrated digital control for clocking, windows-of-interest restructuring and integration time USES a 1.2um CMOS process with linear capacitors. The 20.4x20.4um2 CMOS pixels operate on 5V, have 21% fill factor, 10.6 uV/e- sensitivity, 75dB dynamic range and <0.2% fixed pattern noise using on-chip correction circuitry.
11.2 A 128x128-Pixel Standard-CMOS Image Sensor with Electronic Shutter (9:00)
C. Aw, B. Wooley
Stanford University, Stanford, CA
A 128x128-pixel image sensor with a 20s to 1ms electronic shutter in 1.2um digital CMOS has a 24x24um2 pixel consisting of four pMOS transistors and a 25% fill factor photodiode with anti-blooming. Current-mode signal transfer from the pixels to column readout amplifiers allows frame transfer rates to 0.9ms/frame with 100mW dissipation.
11.3 360x360-Element Very High Burst-Frame Rate Image Sensor (9:30)
W. Kosonocky , G. Yang, C. Ye, R. Kabra, J. Lawrence(1),
V. Mastrocolla(1), D. Long(1), F. Shallcross(2) V. Patel(2)
New Jersey Institute of Technology, Newark, NJ
(1)Princeton Scientific Instruments, Monmouth Junction, NJ
(2)David Sarnoff Research Center, Princeton, NJ
A 360x360-pixel very high frame rate (VHFR) image sensor captures images in 30 frame bursts at up to 106 frames/s. This VHFR imager has 50x50um2 macropixels each consisting of a high-speed zero-lag photodetector with a 13.5% fill factor and 30 stages of a serial-parallel type of CCD register for storage and readout.
BREAK (10:00)
11.4 A 1/4-inch 330k Square Pixel Progressive-Scan IT-CCD Image Sensor with Sub-micrometer Channel Width (10:15)
T. Kuroda, Y. Matsuda, K. Ishikawa, K. Tachikawa, M. Masuyama, M. Asaumi, M. Niwayama, T. Yamada, Y. Miyata, N. Niisoe,
S. Terakawa
Matsushita Electronics Corp., Kyoto, Japan
A CCD imager meets the performance needs of progressive-scan video at the smallest standard image . 600mV saturation output 600mV is obtained using a 0.9um wide, four-phase vertical register with improved doping profiles. The reset gate offset is set automatically using on-chip circuitry. The sensor sensitivity is 72mV/lux.
11.5 A CMOS Front-End for CCD Cameras (10:45)
C. Mangelsdorf, K. Nakamura, S. Ho(1), T. Brooks, K. Nishio, H. Matsumoto(1),
Analog Devices, Wilmington, MA
(1)Sony Corp., Tokyo, Japan
A complete analog interface circuit for camcorders including correlated-double-sampling, 0 to 34dB variable gain, 10b ADC, and voltage reference is integrated on a 3.3x3.4mm2 die in a 0.6mm double-poly CMOS process and consumes 170mW using 3V supplies at 15MHz. This device replaces a two-chip bipolar plus CMOS solution using >400mW from 5V.
11.6 A 9b Charge-to-Digital Converter for Integrated Image Sensors (11:15)
S. Paul(1,2) ,H-S. Lee(2)
(1)MIT Lincoln Lab, Lexington, MA
(2)MIT, Cambridge, MA
A charge-to-digital converter with 9b resolution is implemented in a 2.0um CCD/CMOS process. Charge packets are directly digitized in the charge domain using CCD elements, eliminating charge-to-voltage translation. The converter has 5MHz maximum sampling rate, operates from 5V power supplies, dissipates 20mW, and uses an active area of 1.5mm2.
11.7 A 2.7-inch, 1.3MPixel Driver-Integrated Poly-Si TFT LCD for Multimedia Projectors (11:45)
H. Asada, K. Hirata, K. Ozawa, K. Nakamura, H. Tanabe, K. Sera, K. Hamada, K. Mochizuki, S. Ohi, S. Saitoh, F. Okumura, S. Kaneko
NEC Corp., Kawasaki, Japan
A 1280x1024-pixel driver-integrated poly-Si TFT liquid crystal display is for multimedia projectors. A driver circuit combination of bidirectional shift registers and decoders provides the projector with multi-sync, zoom, and image reversing functions. The LCD has a 50% aperture ratio, 42x42um2 pixels and a black-matrix integrated on the TFT substrate.
CONCLUSION (12:15)
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