Image Sensors and Systems

Chair: R. D. McGrath, Polaroid Corporation, Cambridge, MA
Associate Chair: Y. Fujita, NHK, Tokyo, Japan

13.1 A 1/3inch 630k-Pixel IT-CCD Image Sensor with Multi-Function Capability (1:30)

K. Fujikawa, I. Hirota, M. Ito, H. Mori,
T. Matsuda, M. Sato, Y. Takamura, J. Suzuki, S. Kitayama*
SONY Corp., Kanagawa
*SONY Kokubu Corp., Kagoshima, Japan

A CCD performing vibration stabilization and electronic zoom is -compatible for 4:3 and 16:9 aspect ratio. The H-CCD voltage and reset gate voltage are reduced to 3.3V. Bias preadjust circuits use non-volatile electrically-programmed analog memories to set the substrate bias and reset gate voltage without subsequent external adjustment.


13.2 An Aspect-Ratio-Switchable 2/3inch 800k-Pixel CCD Image Sensor (2:00)

K. Itakura, T. Nobusada, Y. Toyoda, Y. Saitoh,
N. Kokusenya, R. Nagayoshi, H. Tanaka, M. Ozaki
Matsushita Electronics Corp., Osaka, Japan

A multi-use imager provides either 4:3 or 16:9 aspect ratio formatted data. Discarded pixels are clocked through the horizontal register at 81MHz. The device in each aspect ratio achieves 140mV/lx sensitivity, 80dB dynamic range, -120dB smear level, and 60dB signal-to-noise.


13.3 A Single-Layer-Metal-Electrode CCD Image Sensor (2:30)

N. Nakamura, N. Tanaka, N. Endoh, Y. Matsunaga,
M. Sasaki, H. Yamashita, S. Manabe, O. Yoshida
Toshiba Corp., Kawasaki, Japan

A 1/3inch 360k-Pixel CCD image sensor is fabricated with a single tungsten silicide gate layer. The gate gap is 0.3mm and the resulting charge transfer efficiency is >0.99995 at 1.8V operation. The sensor achieves -108dB smear, a 30% reduction in vertical dimensions, and 20% fewer process steps.


Break (3:00)


13.4 A 5k-Pixel CCD Linear Image Sensor with Adjacent RGB Photodiode Rows (3:15)

M. Kojima, T. Watanabe, K. Hirata, T. Takamura, Y. Hiroshima
Matsushita Electronics Corp., Kyoto, Japan

A 5000x3 linear pixel array in a 2.5mm triple-polysilicon double-aluminum burried-channel nMOS uses on-chip RGB filters. Signal is read out from the central row through the elements in one of the outer rows. Low non-uniformity and color balance are obtained at data rates up to 16MHz where the transfer efficiency is 96%.


13.5 A 256x256 CMOS Active-Pixel Image Sensor with Motion Detection (3:45)

A. Dickinson, B. Ackland, E.-S. Eid, D. Inglis, E. Fossum*
AT&T Bell Labs, Holmdel, NJ
*Jet Propulsion Lab, Pasadena, CA

A sensor uses a 20mm pixel consisting of a photogate and four transistors to provide local gain and memory. This allows frame differencing for motion detection. 20mW at 3.3V operation, random image acquisition and 0.9mm CMOS technology are suited for multimedia applications. The pixel has 25% fill factor, 29e noise and 74dB dynamic range.


13.6 Direct Image Processing Using Arrays of Variable-Sensitivity Photodetectors (4:15)

E. Lange, E. Funatsu, J. Ohta, K. Kyuma
Mitsubishi Electric Corp., Hyogo, Japan

A GaAs chip uses 16k variable-sensitivity photodetectors for pixel-level image filtering and a neural network for image transformation. Applications _include edge enhancement, image compression, and Kanji character recognition. The 14.3x14.3mm2 die with 80mm square pixels achieves a dark current of 50pA per pixel at 25°C and a sensitivity of 0.3A/W.


13.7 An Ultra-Compact, Low-Cost Complete Image-Processing System J. Stern, P. Ivey, S. Larcombe (4:45)

University of Sheffield, Sheffield, United Kingdom

A programmable, integrated camera uses a 3D MCM technology. The image is captured in a 312x287 sensor, digitized to 8b, reformatted, and compressed using motion-JPEG at 3Frames/s. Nine chips and 40 discretes are integrated in 442mm3, six times denser than PCB implementation.


Conclusion (5:15)


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