Applications of homodyne (zero-IF) receivers have been limited to simple digital modulation schemes. Implementation issues including dc offset, path mismatch, and spurious local-carrier emission are reexamined within current VLSI technology. The direct-conversion technique is projected to be a major competing architecture for integrated wireless receivers.

11.2 Microwave Wideband Amplifiers in Bulk-CMOS and CMOS/SIMOX Technologies (2:00)

A current-mode amplifier configuration with voltage feedback overcomes MOS short-channel effects and proves the feasibility of implementing GHz wideband amplifiers in submicron bulk-CMOS and CMOS/SIMOX. The 0.6mm SIMOX amplifier has 10dB current gain at 1GHz and consumes 40mW at 3V.

11.3 Multilayer Microwave Integrated Circuit Technology for GaAs Power Amplifiers

A multilayer microwave integrated-circuit (MuMIC) technology replaces large passive elements on a traditional GaAs die with discrete devices placed on a 60mm2 ceramic substrate. A 1.9GHz digital GaAs MuMIC power amplifier achieves 62.2% power-added efficiency at 27dBm output in 0.18cc.

11.4 A 1V CMOS Op Amp Using Bulk-Driven MOSFETs (2:45)

An op amp in 2mm CMOS digital technology works at power supplies down to 1V. The MOSFET is driven from the bulk with the gate taken to a fixed voltage, and composite transistors with low saturation voltages are used. The 0.35mm2 chip has 500x dc gain and 0.6MHz unity-gain bandwidth with 15pF load, and dissipates 45mW.

Break (3:00)

11.5 The Potential of SOI for Analog and Mixed Analog-Digital Low-Power Applications (3:15)

The steeper subthreshold slope of thin-film silicon-on-insulator transistors improves the design of low-voltage logic circuits and offers opportunities for low-power analog and mixed-mode design. SOI technology is examined for high-temperature and radiation-hard applications.

11.6 Current-Mode Amplifier/Integrator for a Field-Programmable Analog Array (3:45)

A bipolar field-programmable analog array contains amplifier cells that provide 60dB gain with 855MHz unity-gain frequency and integrator cells that realize -90°±0.5° phase _shift from 370Hz to 159MHz. The array function and parameters are programmed without switches in the signal path.

11.7 A Transconductor-Based Field-Programmable Analog Array(4:15)

A 1.2mm CMOS field-programmable analog array , 14 MOS transconductors, 4 configurable op-amps with feedback capacitors, and three 6b programmable capacitor arrays are integrated in 11.9mm2. Programmmed circuits _include a filter biquad, full-wave rectifier, and four-quadrant multiplier.

11.8 The Effects of Switching Noise on an Oversampling A/D Converter (4:45)

The effects of digital switching noise in high-resolution mixed-signal integrated circuits are investigated by embedding switchable noise sources in a CMOS cascaded SD modulator. Relative timing of noise and sampling transitions significantly influences distortion. Coupling 5V noise transitions into the substrate through 20pF degrades the peak SNDR >30dB.

Conclusion (5:15)

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