Integrated Sensors and Circuits

Chair: D. Polla, University of Minnesota, Minneapolis, MN
Associate Chair: G. Kovacs, Stanford University, Stanford, CA

9.1 A Battery-Operated Microsystem for Optical Spot-Intensity Measurement (8:30)

M. Chevroulet
CSEM, Neuchatel, Switzerland

A spot-measurement system uses 650 photodetectors formed in a 2mm CMOS process. The 2.5x2.7mm2 chip sensitivity is 0.6-1.0V/decade over the 1W/m2 to 2kW/m2 red light-intensity range. The fixed-pattern noise is 10% and response time is 10-20ms.


9.2 Integrated Analog Sensor for Automatic Alignment (9:00)

C. Umminger, C. Sodini
Massachusetts Institute of Technology, Cambridge, MA

An integrated photodiode system detects the image of a surveyor's mark with current amplifiers providing an x-y error signal independent of illumination level. The 36mm2 BiCMOS circuit resolves 400steps/mm and achieves 0.1% position accuracy with 7.5kHz maximum bandwidth. The chip is used in optical alignment systems.


9.3 A CMOS Chip-set for Detecting 10ppb Concentrations of Heavy Metal Ions (9:30)

J. Ryan, L. Barry, C. Lyden, J. Alderman, B. Lane,
L. Schiffner*, J. Boldt*, H. Thieme*
University College, Cork, Ireland
*Zentrum Mikroelecktronik, Dresden, Germany

Two CMOS ASICs simultaneously detect Pb, Cu, Cd, and Zn ions in water. The 5.1x3.5mm2 sensor chip provides temperature, pH, and ion concentration measurements, with an ion-concentration resolution of 10ppb. The 5.1x5.6mm2 control chip includes a 14b ADC, a 10b DAC, and dissipates 50mW.


9.4 A Monolithic Surface-Micromachined Accelerometer with Digital Output (10:00)

C. Lu, M. Lemkin, B. Boser
University of California, Berkeley, CA

A monolithic surface-micromachined z-axis accelerometer with electrostatic force-feedback and an on-chip A/D converter achieves a 50dB dynamic range measured in a 50Hz bandwidth with a ±5g input range. The active die area, including the 400x400mm2 sensor, is 3mm2.


Break (10:30)


9.5 A Programmable Mixed-Signal ASIC for Data-Acquisition Systems in Medical Implants (10:45)

R. Lerch, E. Spiegel, R. Kakerow, R. Hakenes, H. Kappert,
H. Kohlhaas, N. Kordas, M. Buchmann, T. Franke, Y. Manoli
*J. Muller
Fraunhofer Institute, Duisburg
*Deutsches Herzzentrum, Berlin, Germany

A data-acquisition ASIC for medical implants is composed of a microcontroller and three programmable analog channels. The 85mm2 die with 75k transistors fabricated in 1.6mm CMOS operates from 2.5 to 5V. 1mV/Hz½ equivalent channel input noise is obtained with 3.9mW power dissipation.


9.6 Surface Micromachining: From Vision to Reality to Vision (11:15)

R. Payne, S. Sherman, S. Lewis, R. Howe*
Analog Devices, Norwood, MA
*University of California, Berkeley, CA

The philosophy and development of micromachined polysilicon transducers integrated with 3mm BiCMOS is presented. A 50g force-balanced airbag accelerometer with full on-chip signal processing and self-test is realized. Future technology applications _include multi-axis accelerometers, gas flow sensors, and building blocks such as clocks, resonators, and filters.


9.7 A Micromachined Low-Power Temperature-Regulated Bandgap Voltage Reference (11:45)

R. Reay, E. Klaassen, G. Kovacs
Stanford University, Stanford, CA

Thermally- and electrically-isolated single-crystal silicon islands micromachined in standard CMOS chips form a bandgap voltage reference. Temperature coefficient is 9ppm/°C. The reference has 53,000°C/W thermal resistance, 2.5ms thermal time constant, and dissipates 1.5mW at 25°C.


Conclusion (12:00)


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