A 3.3V 16Mb Flash memory in 0.6mm CMOS delivers 20ns continuous access resulting in a maximum data-transfer rate of 100MB/s. It uses two-way bank interleaving with a segmented-array architecture. Programmable internal latency (PIL) provides operation from 50MHz down to dc. A low-threshold-voltage transistor allows operation at 3.3V.

7.2 A 3.3V-Only 16Mb DINOR Flash Memory (9:00)

A 3.3V-only 16Mb divided-bitline NOR flash memory features 47ns random-access time and 60mW power dissipation during programming. A 256B page buffer achieves 1MB/s program data rate. The 0.5mm triple-poly, triple-well process produces a 1.4x1.35mm2 cell and 77mm2 die. Erase block is 64kB.

7.3 A 3.3V High-Density AND Flash Memory with 1ms/512B Erase and Program (9:30)

3.3V 32Mb AND flash memory has a 512B sector program/erase. The 10.1x4.38mm2 die has 75ns random byte-access time, 36ns serial read time, and 1ms sector-erase time. High-repairability redundancy supports random sector replacement.

7.4 A 34Mb 3.3V Serial Flash EEPROM for Solid-State Disk Applications (10:00)

A 34Mb Serial Flash EEPROM has an on-chip digitally-controlled-voltage scheme. The 121mm2 die has an erasable sector of 512 data bytes and 32.5 system-overhead bytes. The chip verifies while programming 242b in parallel. The 0.5mm CMOS process achieves a 2.1mm2 cell.

Break (10:30)

7.5 A 3.3V 32Mb NAND Flash Memory with Incremental-Step Pulse Programming (10:45)

The 0.5mm 3.3V-only 32Mb NAND flash memory features a 94.9mm2 die. Incremental-step-pulse programming achieves a 2.3MB/s program data rate. A 25ns burst cycle produces a 24MB/s read data rate with an operating current less than 8mA.

7.6 A 35ns cycle time 3.3V-Only 32Mb NAND Flash EEPROM (11:15)

A Flash EEPROM in 0.4mm CMOS achieves 35ns cycle time by adopting a pipeline scheme. Metal-strapped select gates and boosted word lines reduce read-access time. Multiple-block erase is realized by adopting erase block registers for each block. All functions operate with one 3.3V power supply.

7.7 A Multi-Level-Cell 32Mb Flash Memory (11:45)

A 32Mb Flash Memory is constructed with 16M physical flash cells storing two bits in each cell. 120ns access time, 25mA active current, and 10ms/B program time are achieved. 0.6mm CMOS with a 2.0x1.8mm2 cell results in a 152mm2 die.

Conclusion (12:15)

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